BS170

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Beijing Silk Road Enterprise Management Services Co.,LTD

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BS170

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Product Status	Active
Mounting Type	Through Hole
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Series	-
Vgs (Max)	±20V
Package	Bulk
Supplier Device Package	TO-92-3
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 10V
Mfr	onsemi
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	830mW (Ta)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	BS170
Description	MOSFET N-CH 60V 500MA TO92-3

Detailed Product Description

N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3

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