SI7155DP-T1-GE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SI7155DP-T1-GE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	40 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	12900 pF @ 20 V
Mounting Type	Surface Mount
Series	TrenchFET® Gen III
Supplier Device Package	PowerPAK® SO-8
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 100A (Tc)
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	SI7155
Description	MOSFET P-CH 40V 31A/100A PPAK

Detailed Product Description

P-Channel 40 V 31A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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