FQA27N25

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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FQA27N25

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Rds On (Max) @ Id, Vgs	110mOhm @ 13.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	250 V
Vgs (Max)	±30V
Product Status	Obsolete
Input Capacitance (Ciss) (Max) @ Vds	2450 pF @ 25 V
Mounting Type	Through Hole
Series	QFET®
Supplier Device Package	TO-3PN
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Power Dissipation (Max)	210W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	FQA27
Description	MOSFET N-CH 250V 27A TO3PN

Detailed Product Description

N-Channel 250 V 27A (Tc) 210W (Tc) Through Hole TO-3PN

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