FDMS10C4D2N

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FDMS10C4D2N

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 44A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 50 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	8-PQFN (5x6)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Power Dissipation (Max)	125W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	FDMS10
Description	MOSFET N-CH 100V 17A 8PQFN

Detailed Product Description

N-Channel 100 V 17A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6)

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