SIHP35N60E-BE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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SIHP35N60E-BE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	132 nC @ 10 V
Product Status	Active
Mounting Type	Through Hole
Package	Tube
Input Capacitance (Ciss) (Max) @ Vds	2760 pF @ 100 V
Series	E
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Rds On (Max) @ Id, Vgs	94mOhm @ 17A, 10V
Mfr	Vishay Siliconix
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Description	N-CHANNEL 600V

Detailed Product Description

N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

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