SCT20N120

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SCT20N120

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.5V @ 1mA
Operating Temperature	-55°C ~ 200°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 20 V
Rds On (Max) @ Id, Vgs	290mOhm @ 10A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	+25V, -10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 400 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	HiP247™
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Power Dissipation (Max)	175W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	SCT20
Description	SICFET N-CH 1200V 20A HIP247

Detailed Product Description

N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™

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