IRF620PBF-BE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRF620PBF-BE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Type	N-Channel
FET Feature	-
Product Status	Active
Mounting Type	Through Hole
Package	Tube
Vgs(th) (Max) @ Id	4V @ 250µA
Series	-
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Supplier Device Package	TO-220AB
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
Mfr	Vishay Siliconix
Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	50W (Tc)
Package / Case	TO-220-3
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRF620
Description	MOSFET N-CH 200V 5.2A TO220AB

Detailed Product Description

N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

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