CSD19536KCS

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD19536KCS

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	153 nC @ 10 V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 50 V
Mounting Type	Through Hole
Series	NexFET™
Supplier Device Package	TO-220-3
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	150A (Ta)
Power Dissipation (Max)	375W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD19536
Description	MOSFET N-CH 100V 150A TO220-3

Detailed Product Description

N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3

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