CSD25310Q2

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD25310Q2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	23.9mOhm @ 5A, 4.5V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	±8V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	655 pF @ 10 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	6-WSON (2x2)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Power Dissipation (Max)	2.9W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD25310
Description	MOSFET P-CH 20V 20A 6WSON

Detailed Product Description

P-Channel 20 V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)

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