IRLR3636TRPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRLR3636TRPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 100µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	60 V
Vgs (Max)	±16V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
Mounting Type	Surface Mount
Series	HEXFET®
Supplier Device Package	D-Pak
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Power Dissipation (Max)	143W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRLR3636
Description	MOSFET N-CH 60V 50A DPAK

Detailed Product Description

N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak

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