STFH10N60M2

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Beijing Silk Road Enterprise Management Services Co.,LTD

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STFH10N60M2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 10 V
Rds On (Max) @ Id, Vgs	600mOhm @ 9A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±25V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 100 V
Mounting Type	Through Hole
Series	MDmesh™
Supplier Device Package	TO-220FPAB
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
Power Dissipation (Max)	25W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STFH10
Description	MOSFET N-CH 600V 7.5A TO220FP

Detailed Product Description

N-Channel 600 V 7.5A (Tc) 25W (Tc) Through Hole TO-220FPAB

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