FCPF11N60F

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FCPF11N60F

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Rds On (Max) @ Id, Vgs	380mOhm @ 5.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±30V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	1490 pF @ 25 V
Mounting Type	Through Hole
Series	SuperFET™
Supplier Device Package	TO-220F-3
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Power Dissipation (Max)	36W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	FCPF11
Description	MOSFET N-CH 600V 11A TO220F

Detailed Product Description

N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3

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