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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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IRFHM9331TRPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFHM9331TRPBF

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature -
Vgs(th) (Max) @ Id 2.4V @ 25µA
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 20V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±25V
Product Status Active
Input Capacitance (Ciss) (Max) @ Vds 1543 pF @ 25 V
Mounting Type Surface Mount
Series HEXFET®
Supplier Device Package PQFN (3x3)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc)
Power Dissipation (Max) 2.8W (Ta)
Technology MOSFET (Metal Oxide)
Base Product Number IRFHM9331
Description MOSFET P-CH 30V 11A/24A PQFN
Detailed Product Description
P-Channel 30 V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)
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