STL19N60M6

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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STL19N60M6

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.75V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	16.8 nC @ 10 V
Rds On (Max) @ Id, Vgs	308mOhm @ 6.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±25V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 100 V
Mounting Type	Surface Mount
Series	MDmesh™ M6
Supplier Device Package	PowerFlat™ (8x8) HV
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Power Dissipation (Max)	90W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STL19
Description	MOSFET N-CH 600V 11A PWRFLAT HV

Detailed Product Description

N-Channel 600 V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV

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