TK7J90E,S1E

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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TK7J90E,S1E

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 700µA
Operating Temperature	150°C (TJ)
Package / Case	TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Rds On (Max) @ Id, Vgs	2Ohm @ 3.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	900 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 25 V
Mounting Type	Through Hole
Series	π-MOSVIII
Supplier Device Package	TO-3P(N)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Power Dissipation (Max)	200W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	TK7J90
Description	MOSFET N-CH 900V 7A TO3P

Detailed Product Description

N-Channel 900 V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)

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