FDS2672

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FDS2672

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Rds On (Max) @ Id, Vgs	70mOhm @ 3.9A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2535 pF @ 100 V
Mounting Type	Surface Mount
Series	UltraFET™
Supplier Device Package	8-SOIC
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Power Dissipation (Max)	2.5W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	FDS26
Description	MOSFET N-CH 200V 3.9A 8SOIC

Detailed Product Description

N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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