CSD25202W15

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD25202W15

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.05V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	9-UFBGA, DSBGA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	26mOhm @ 2A, 4.5V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	-6V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1010 pF @ 10 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	9-DSBGA
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Power Dissipation (Max)	500mW (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD25202
Description	MOSFET P-CH 20V 4A 9DSBGA

Detailed Product Description

P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA

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