NTE2386

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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NTE2386

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Product Status	Active
Mounting Type	Through Hole
Package	Bag
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Series	-
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-3
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.4A, 10V
Mfr	NTE Electronics, Inc
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-204AA, TO-3
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Tc)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Description	MOSFET N-CHANNEL 600V 6.2A TO3

Detailed Product Description

N-Channel 600 V 6.2A (Tc) 125W (Tc) Through Hole TO-3

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