R6025JNXC7G

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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R6025JNXC7G

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	7V @ 4.5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Rds On (Max) @ Id, Vgs	182mOhm @ 12.5A, 15V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 100 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-220FM
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Power Dissipation (Max)	85W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	R6025
Description	MOSFET N-CH 600V 25A TO220FM

Detailed Product Description

N-Channel 600 V 25A (Tc) 85W (Tc) Through Hole TO-220FM

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