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Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ...
2024-12-09 22:41:44
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Product Details FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal ...
2024-12-09 22:41:44
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Product Details PRODUCT DESCRIPTION The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits ...
2024-12-09 22:41:44
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Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data ...
2024-12-09 22:41:44
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Product Details DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential ...
2024-12-09 22:41:44
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Product Details DEVICE OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs ...
2024-12-09 22:41:44
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Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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