China Integrated Circuit IC manufacturer
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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flash memory chip 64kbit

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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541 - 550 of 638

flash memory chip 64kbit

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Product Details DEVICE DESCRIPTION The CAT24C01/02/04/08/16 are 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb respectively CMOS Serial EEPROM devices organized ... 2024-12-09 22:41:44
Product Details Functional Description The CY62128EV30[1] is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device ... 2024-12-09 22:41:44
Product Details GENERAL DESCRIPTION The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high ... 2024-12-09 22:41:44
Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ... 2024-12-09 22:41:44
Product Details FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal ... 2024-12-09 22:41:44
Product Details Mobile Low-Power DDR SDRAM Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined ... 2024-12-09 22:41:44
Product Details Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support ... 2024-12-09 22:41:44
Product Details Functional Description[1] The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18 Synchronous Flow-through Burst SRAM designed ... 2024-12-09 22:41:44
Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ... 2024-12-09 22:41:44
Product Details General Description BR24T256-W is a serial EEPROM of I2C BUS Interface Method Features ■ Completely conforming to the world standard ... 2024-12-09 22:41:44
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