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external data acquisition ic
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Product Details Functional Description The CY7C1353 is a 3.3V 256K by 18 Synchronous-Flow-Through Burst SRAM designed specifically to support ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The W25Q80DV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The W25Q80 (8M-bit), W25Q16 (16M-bit), and W25Q32 (32M-bit) Serial Flash memories provide a storage solution for ...
2024-12-09 22:41:44
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Product Details DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The ...
2024-12-09 22:41:44
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Product Details GENERAL DESCRIPTION The W25Q128BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and ...
2024-12-09 22:41:44
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Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ...
2024-12-09 22:41:44
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Product Details Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support ...
2024-12-09 22:41:44
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Product Details Functional Description[1] The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18 Synchronous Flow-through Burst SRAM designed ...
2024-12-09 22:41:44
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Product Details Functional Description The CY7C138AV/144AV/006AV/007AV and CY7C139AV/145AV/ 016AV/017AV are low-power CMOS 4K, 8K, 16K, and 32K x8/9 ...
2024-12-09 22:41:44
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Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ...
2024-12-09 22:41:44
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