China Integrated Circuit IC manufacturer
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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flash memory ic

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Product Details Functional Description[1] The CY7C1399B is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Features • ... 2024-12-09 22:41:44
Product Details Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high... 2024-12-09 22:41:44
Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward ... 2024-12-09 22:41:44
Product Details Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short ... 2024-12-09 22:41:44
Product Details Functional Description The CY7C138AV/144AV/006AV/007AV and CY7C139AV/145AV/ 016AV/017AV are low-power CMOS 4K, 8K, 16K, and 32K x8/9 ... 2024-12-09 22:41:44
Product Details Functional Description[1] The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18 Synchronous Flow-through Burst SRAM designed ... 2024-12-09 22:41:44
Product Details Description The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, ... 2024-12-09 22:41:44
Product Details Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support ... 2024-12-09 22:41:44
Product Details Mobile Low-Power DDR SDRAM Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined ... 2024-12-09 22:41:44
Product Details GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. ... 2024-12-09 22:41:44
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