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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

Brand Name in
Model Number STAV58010P2
Place of Origin CN
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability 3550 pcs In stock
Delivery Time 5-8 work days
Packaging Details anti-static bag & cardboard box
Operating Voltage 55 Vdc
Maximum forward gate current 2 mA
Gate--Source Voltage S -8 to +0.5 Vdc
Drain--Source Voltage +200 Vdc
Storage Temperature Range -65 to +150
Case Operating Temperature +150
Operating Junction Temperature +225
Detailed Product Description

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor
 
Description
 
The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz.
It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

  • Typical Class AB Single--Carrier W--CDMA Characterization Performance:

VDD = 50 Vdc, IDQ = 20 mA, Input Signal PAR = 10 dB @ 0.01% Probability on CCDF.
(On innogration application board with device soldered)
 

Freq
(MHz)

Pout
(dBm)

CCDF
(dB)

Ppeak
(dBm)

Ppeak
(W)

ACRP
(dBc)

Gain
(dB)

Eff
(%)

3300

33.009.1242.1216.3-35.916.827.8
340032.999.0442.0316.0-36.317.127.8
350033.008.9241.9215.6-37.117.428.7
360032.978.9041.8815.4-38.117.527.4
370033.008.9741.9715.7-39.417.427.4
380033.018.9041.9115.5-40.716.625.7

 
Applications

  • 5G, 4G wireless infrastructure
  • Wideband or narrowband power amplifier
  • Test instruments
  • Civil pulse radar
  • Jammer

 
 




















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