STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor
 
Description
 
The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz.
It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

• Typical Class AB Single--Carrier W--CDMA Characterization Performance:

V_DD = 50 Vdc, I_DQ = 20 mA, Input Signal PAR = 10 dB @ 0.01% Probability on CCDF.
(On innogration application board with device soldered)
 

 
Applications

• 5G, 4G wireless infrastructure
• Wideband or narrowband power amplifier
• Test instruments
• Civil pulse radar
• Jammer