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industrial insulated gate bipolar transistor
Selling leadsPowerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and ...
2026-02-13 10:33:15
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High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
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... coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:10
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...Insulated Gate Bipolar Transistor (IGBT) designed for ignition systems, particularly in Coil-on-Plug and Driver-on-Coil applications. It features ...
2026-02-13 10:32:03
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RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode
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... a low collector-to-emitter saturation voltage (VCE(sat)) of 1.45V typ., a built-in fast recovery diode, and utilizes trench gate and thin wafer ...
2026-02-13 10:31:30
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Product Overview The IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This ...
2026-02-13 10:32:46
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Product Overview The IKW40N120CH7XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) ...
2026-02-13 10:33:26
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power transistor HXY MOSFET IRG7PH46U-EP-HXY offering improved switching speed and thermal stability
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Product Overview The IRG7PH46U-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. ...
2026-02-13 10:33:21
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Product Overview The IRGP4063DPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. ...
2026-02-13 10:33:20
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Product Overview The IKW50N65H5 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This ...
2026-02-13 10:33:17
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Product Overview The IXYX120N120C3 is a 1200V, 140A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features ...
2026-02-13 10:33:16
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