China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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wireless charging low power mosfets

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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wireless charging low power mosfets

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... drives, consumer electronics, and battery chargers. Its high-frequency capabilities make it ideal for high-speed switching applications. It also ... 2025-07-28 00:25:40
... MAX Typ Typ CS2N65A4 TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON ... 2025-02-08 13:29:38
...MOSFET 100% Avalanche Tested Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. ... 2025-02-08 13:29:27
Large EMI Margin Excellent Gate Charge 100% Avalanche Tested Much Lower Ron*A Performance for On-state Efficiency *, *::before, *::after {box-sizing: ... 2025-07-28 00:25:39
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-28 00:25:39
Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. ... 2025-07-28 00:25:40
Product Description: N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power Semiconductor Designed with a low junction ... 2025-07-28 00:25:39
... for a wide range of applications. This product is known for its low junction capacitance and N-type design, which makes it ideal for use in ... 2025-07-28 00:25:39
Power Discrete Devices with Ultra Low On-Resistance and Large EMI Margin *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:40
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
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