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Guangdong Lingxun Microelectronics Co., Ltd
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uninterruptible power supply mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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uninterruptible power supply mosfet

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Strong Anti Surge Current Ability Silicon Carbide MOSFET For Battery Chargers Product Description: The Silicon Carbide MOSFET is designed to offer ... 2025-07-11 00:37:58
... breakdown voltage, and high saturation velocity. These properties make the Silicon Carbide MOSFET ideal for high-frequency applications. It is ... 2025-07-11 00:37:58
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
... MAX Typ Typ CS2N65A4 TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON ... 2025-02-08 13:29:38
...MOSFET 100% Avalanche Tested Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. ... 2025-02-08 13:29:27
... LT15N10AD TO-252 1 N 15 100 ±20 1 2.5 88 110 95 140 - - Product Description: With its low Rds(ON) resistance and low power loss, this MOSFET is ... 2025-04-01 14:35:03
LT40P04AD Low Voltage MOSFET TO-252 Package P Channel For PWM Application Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) ... 2025-04-26 19:31:38
... Typ Typ LT50N06AP TO-220C 1 N 50 60 ±20 1 2.5 12 17 16 25 Product Description: In addition to its low power consumption, the Low Voltage MOSFET is ... 2025-04-01 14:35:05
LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:28:40
...MOSFET With TO-263 Package Low Power Loss Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4... 2025-02-08 13:29:15
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