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uninterruptible power supplies igbt
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...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ...
2025-07-28 00:25:40
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...Power Supplies Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its proprietary new super-junction ...
2025-07-28 00:25:40
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...Power Supplies LC65R190F Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. ...
2025-02-08 13:28:40
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... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ...
2025-04-01 14:35:06
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...Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, electric vehicles, grid infrastructure, industrial ...
2025-07-28 00:25:39
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Longevity Power Electronics Power Discrete Devices Silicon Carbide Diodes For Power Supply Circuit *, *::before, *::after {box-sizing: border-box;}* ...
2025-07-28 00:25:39
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... losses. The use of silicon carbide material in the MOSFET design allows for better switching performance, higher operating frequencies, and ...
2025-07-28 00:25:39
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Temperature Resistant Silicon Carbide SBD Power Device For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-28 00:25:39
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Reduce Power Loss During Rectification Low VF Schottky Diode For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html...
2025-07-28 00:25:39
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...Power Supply Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) IF (A) Typ (V) Max (V) ...
2025-07-28 00:25:40
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