China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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to 263c high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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to 263c high power mosfet

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5A 650V 780mΩ N Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERIST... 2025-07-11 00:37:58
Low Reverse Transfer Capacitance High Voltage MOSFET For Switched Mode Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-11 00:37:58
...t make it stand out in the market. Firstly, it has a high breakdown voltage, making it suitable for PWM in motor control and industrial automation ... 2025-02-08 13:29:40
... MAX Typ Typ CS10N50A2 TO-220F N 10 500 ±30 2 4 460 550 Product Description: One of the standout features of the CS10N50A2 MOSFET is its low ON ... 2025-02-08 13:29:39
N Channel High Voltage MOSFET Cool Mos For Power Switch Circuit Of Adaptor And Charger *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC... 2025-07-11 00:37:58
... Typ Typ CS28N50A6 TO-247 N 28 500 ±30 2 4 200 240 Product Description: With 100% avalanche tested technology, this MOSFET can withstand high ... 2025-02-08 13:29:27
... Typ Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS MOSFET minimizes power loss and ... 2025-02-08 13:29:30
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