China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
View Contact Details
91 - 98 of 98

to 247 power igbt

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High Voltage MOSFET For High Speed Switching Power Loss Reduction Photovoltaic *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-28 00:25:39
... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ... 2025-07-28 00:25:39
...Power Management Product Description: Our Schottky Barrier Diodes come in a variety of packages such as TO-251, TO-252, TO-263, TO-220, and TO-247, ... 2025-07-28 00:25:39
...247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68mΩ FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single ... 2025-07-28 00:25:39
... • Fast Recovery Body-Diode • Lower Gate Resistance • 100% Avalanche Tested APPLICATIONS • Soft Switching Topologies • Telecom and Sever Power ... 2025-02-12 07:30:10
... Typ Typ CS20N65A6 TO-247 N 20 650 ±30 2 4 420 460 Product Description: One of the most significant advantages of this MOSFET is its low ON ... 2025-02-08 13:29:27
...Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR30200PT TO-247 1 30 200 15 0.95 1.0 5 180 175 Product Description: With their low VF, the MBR30200PT ... 2025-02-08 13:30:17
...MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ... 2025-04-01 14:35:10
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