China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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to 247 high power semiconductor

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...high-frequency applications that require fast switching speeds. Its low leakage feature ensures minimal power loss, enhancing the overall ... 2025-07-11 00:37:58
...its robustness and durability. With its low junction capacitance, it can help reduce power losses and enhance the overall efficiency of a system. ... 2025-07-11 00:37:58
...high voltage capacity, this High Power Semiconductor product can handle high voltage applications with ease. It is also designed with low junction ... 2025-07-11 00:37:58
... capability APPLICATIONS • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in Guangdong, ... 2025-07-11 00:37:58
.... This product is known for its low junction capacitance and N-type design, which makes it ideal for use in charging pile and renewable energy ... 2025-07-11 00:37:58
...247 High Power IGBT High Speed Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and field-stop ... 2025-07-11 00:37:58
...High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • ... 2025-07-11 00:37:58
...High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS... 2025-07-11 00:37:58
...High Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS... 2025-07-11 00:37:58
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