China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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to 220ab low vgs mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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to 220ab low vgs mosfet

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... TYP MAX Typ Typ LG120N10AP TO-220C 1 N 120 100 ±20 2 4 4.5 5.62 Product Description: One of the primary advantages of using this MOSFET is that it ... 2025-02-08 13:28:59
...MOSFET Low ON Resistance For Adapter CS12N65A2 TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:40
Advanced Trench Technology Enhancement Mode Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced ... 2025-07-28 00:25:39
...MOSFET Low ON Resistance For Power Management Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min... 2025-02-08 13:29:32
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
...Low Conduction Loss Cool Mosfet For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERIS... 2025-07-28 00:25:39
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
... 650V 150mΩ Low Ciss Super Junction MOSFET For Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTIC... 2025-07-28 00:25:39
...Low Gate Charge Super Junction Mosfet For SMPS N-channel Super Junction MOSFET Part No.:LC65R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS... 2025-07-28 00:25:39
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
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