China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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switching power supply low vf schottky

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switching power supply low vf schottky

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...Schottky Diodes For Communication Equipment Features: Product Name: Schottky Barrier Diodes Package: TO-251, TO-252, TO-263, TO-220, TO-247 ... 2025-07-28 00:25:39
16A45V MBR1645CS Planner Schottky Diodes with Low Power Losses TO-252 Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj ... 2025-07-28 00:25:40
... (mA) MBR30200CT TO-220AB 1 30 200 15 0.95 1.0 5 180 175 Product Description: One of the key features of the MBR series is their low forward ... 2025-07-28 00:25:40
40A100V Affordable Fast Switching Speed Guarding For Over Voltage Protection MBR40100FCT Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) ... 2025-07-28 00:25:40
...Low Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-28 00:25:39
...Power Mosfet For Hard Switching Resonant Switching PWM Stages Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse ... 2025-07-28 00:25:39
Low Ciss High Power MOSFET Ideal For Power Factor Correction Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse ... 2025-07-28 00:25:40
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-28 00:25:39
...Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely ... 2025-07-28 00:25:40
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