China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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switch low voltage mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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switch low voltage mosfet

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...MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ FEATURES Adopt advanced trench technology to ... 2025-07-28 00:25:39
...MOSFET For AC-DC Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS... 2025-07-28 00:25:39
... MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V RDSON-typ VGS=10V: 1.33Ω FEATURES • Fast Switching • Low ON ... 2025-07-28 00:25:39
...Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to emitter saturation voltage • High speed ... 2025-07-28 00:25:40
... power station Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching ... 2025-07-28 00:25:40
...Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology ... 2025-07-28 00:25:40
...temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to emitter ... 2025-07-28 00:25:39
...Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology ... 2025-07-28 00:25:39
... N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low ... 2025-07-28 00:25:39
...Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching capability • Short ... 2025-07-28 00:25:39
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