China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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standby power high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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standby power high power mosfet

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...high-quality semiconductor devices, this MOSFET is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet ... 2025-07-11 00:37:58
...High Power Mosfet For Hard Switching Resonant Switching PWM Stages Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single ... 2025-07-11 00:37:58
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
... Qgd • Fast switching • 100% CP tested APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power Supply Q1.Who ... 2025-07-11 00:37:58
...High Voltage MOSFET N Type For Power Supplies TO-251 Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:33
...Power Switch Circuit of Adaptor High Voltage MOSFET Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:31
...High Voltage MOSFET Low ON Resistance For Power Management Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) ... 2025-02-08 13:29:32
...High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-10 11:19:53
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...High Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche ... 2025-07-11 00:37:58
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