China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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standby power high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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standby power high power mosfet

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Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100... 2025-07-11 00:37:58
Multiscene Insulated Gate Bipolar Transistor Inverter For Uninterruptible Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
...Power Losses Low VF Schottky For Miniature Switched Mode Power Supplies Features • Very low forward voltage • High current capability • High ... 2025-07-11 00:37:58
...Power Management Power Switches Product Description: One of the key features of this product is its low forward voltage, which results in high ... 2025-07-11 00:37:58
...High Power IGBT For Solar Inverters MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):188nS FEATURES • Positive temperature ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...High Current Low VF Schottky Diodes For Power Supply Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) ... 2025-07-11 00:37:58
High Current Capability Schottky Barrier Diodes For DC/DC conerters Features • Low forward voltage • High current capability • High forward surge ... 2025-07-11 00:37:58
Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) ... 2025-07-11 00:37:58
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