China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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stable power discrete devices

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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stable power discrete devices

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...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, ... 2025-07-11 00:37:58
... management and reduces power loss. The MOSFET is made from high-quality silicon material which ensures high efficiency and reliable performance. ... 2025-07-11 00:37:58
...Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is ... 2025-07-11 00:37:58
Temperature Resistant Silicon Carbide SBD Power Device For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
.... This feature also helps in minimizing heat dissipation, saving you money on cooling expenses. With a low Rds(ON), you can be sure that your ... 2025-04-01 14:35:07
...Stable 60KHz Multiscene High Current Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and ... 2025-07-11 00:37:58
... coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant PFC applications • Uninterrupti... 2025-07-11 00:37:58
...Stable Charging Pile Ultra Inverter IGBT Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Positive ... 2025-07-11 00:37:58
... TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:38
High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
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