171 - 180 of 186
silicon low power mosfet transistors
Selling leads
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...MOSFET 100% Avalanche Tested Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. ...
2025-02-08 13:29:27
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... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ...
2025-07-11 00:37:58
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... Charge x RDS(ON) Product(FOM) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q1.Who are we? A:We are based in Guangdong, ...
2025-07-11 00:37:58
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Low Loss Silicon Carbide SBD For LED Lighting PC Power Supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;...
2025-07-11 00:37:58
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...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ...
2025-07-11 00:37:58
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Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. ...
2025-07-11 00:37:58
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UPS High Power Semiconductor SiC MOS For Motor Control Centers *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;...
2025-07-11 00:37:58
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Power Discrete Devices with Ultra Low On-Resistance and Large EMI Margin *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-11 00:37:58
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...Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ...
2025-07-11 00:37:58
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...Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ...
2025-07-11 00:37:58
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