China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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pwm low power p channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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pwm low power p channel mosfet

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...Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ ... 2025-07-11 00:37:58
...Low Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
... MAX Typ Typ CS2N65A4 TO-251 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: One of the standout features of this MOSFET is its low ON ... 2025-02-08 13:29:38
...Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
Multifunctional Low Voltage MOSFET for Power Management Features • Positive temperature coefficient • High speed switching • Low collector to emitter ... 2025-07-11 00:37:58
...channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate ... 2025-07-11 00:37:58
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