China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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power discrete devices super junction mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power discrete devices super junction mosfet

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... and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC... 2025-07-11 00:37:58
...Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
...Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V ... 2025-07-11 00:37:58
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Product Description: One of the most significant benefits of high voltage power semiconductors is their ability to handle high voltages and currents ... 2025-07-11 00:37:58
...Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • ... 2025-07-11 00:37:58
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