China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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power discrete devices n channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power discrete devices n channel mosfet

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Product Description: Low Leakage Voltage Power IGBT For Industrial Applications High voltage power IGBT, High voltage power cool mos, and high voltage ... 2025-07-11 00:37:58
...Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON... 2025-07-11 00:37:58
...MOSFET for Telecom Server Power Supplies LC65R190F Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:28:40
...MOSFET For AC-DC Power Supply N-channel Super Junction MOSFET Part No.:LC60R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:600V RDSON-typ VGS... 2025-07-11 00:37:58
Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and ... 2025-07-11 00:37:58
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ ... 2025-07-11 00:37:58
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