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n channel power igbt
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Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100...
2025-07-28 00:25:39
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High Efficiency 15A 650V High Power IGBT TO-263C For Motor Control MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.6V ...
2025-07-28 00:25:39
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... • Low VCE(sat) • Reliable and Rugged APPLICATIONS • UPS • Motor drives • Boost • Portable power station Q1.Who are we? A:We are based in Guangdong...
2025-07-28 00:25:40
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...Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive temperature coefficient • Fast Switching • ...
2025-07-28 00:25:40
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...Power IGBT For Solar Inverters MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):188nS FEATURES • Positive temperature coefficient • ...
2025-07-28 00:25:40
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...IGBT Practical For Photovoltaic Inverter Home appliances • Motor drives • Fan, Pumps, Vacuum cleaner • General inverter Resonant converters • UPS • ...
2025-07-28 00:25:39
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;...
2025-07-28 00:25:39
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9A500V CS9N50A2 TO-220F High Voltage Mosfet N Channel Power Transistors Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ...
2025-02-08 13:29:44
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Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal ...
2025-07-28 00:25:39
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Product Description: Manufactured by Lingxun Microelectronics, a leading manufacturer of high-quality semiconductor devices, this MOSFET is brand new ...
2025-07-28 00:25:39
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