China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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multipurpose sic power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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multipurpose sic power mosfet

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Power Discrete Devices with Ultra Low On-Resistance and Large EMI Margin *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:40
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
Large EMI Margin Excellent Gate Charge 100% Avalanche Tested Much Lower Ron*A Performance for On-state Efficiency *, *::before, *::after {box-sizing: ... 2025-07-28 00:25:39
...tem efficiency. The PDFN5*6,TO-252 and TO-220C package options provide flexibility for designers and engineers to choose the best fit for their ... 2025-07-28 00:25:40
...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ... 2025-07-28 00:25:39
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