China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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multipurpose high power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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71 - 80 of 369

multipurpose high power mosfet

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...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-11 00:37:58
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
... Typ CS5N50A2 TO-220F N 5 500 ±30 2 4 1510 1600 15 545 Product Description: The Gate-Source Voltage (Vgs) of this MOSFET is ±30V, which makes it ... 2025-02-08 13:29:39
... MAX Typ Typ CS2N65A2 TO-220F N 2 650 ±30 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage ... 2025-02-08 13:29:30
...High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
...High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures that the system ... 2025-07-11 00:37:58
...High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS... 2025-07-11 00:37:58
11A 650V 340mΩ TO-220F High Voltage MOSFET For Battery Protection N-channel Super Junction MOSFET Part No.:LC65R380F Package:TO-220f MAIN CHARACTERIST... 2025-07-11 00:37:58
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