China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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mosfet silicon power transistors

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Power Discrete Devices Silicon Carbide Schottky Barrier Diode For LED Lighting *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ... 2025-07-11 00:37:58
Temperature Resistant Silicon Carbide SBD for Frequency and Power Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
Improved Power Conversion Efficiency Silicon Carbide SBD For Induction Cooker *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
Low Power Consumption Silicon Carbide SBD For Washing Machine *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
Low Loss Silicon Carbide SBD For LED Lighting PC Power Supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
Power Silicon Carbide Schottky Barrier Diodes For Electric Oven *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%... 2025-07-11 00:37:58
...Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A ... 2025-07-11 00:37:58
...Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V ... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
...Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V ... 2025-07-11 00:37:58
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