China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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lt40p04ad low power p channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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lt40p04ad low power p channel mosfet

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...Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...Power MOSFET N-Channel Multiscene Industrial Mos N-Channel Enhancement Mode Power MOSFET Part No.:CS3N50A2 Package:TO-251 MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...Fast Switching • Low ON Resistance • Low Gate Charge APPLICATIONS • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply(UPS) • Power ... 2025-02-12 07:30:10
...Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERI... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...MOSFET For Switch Mode Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min... 2025-02-08 13:29:41
...Low Voltage MOSFET With TO-263 Package Low Power Loss Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m... 2025-02-08 13:29:15
...Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
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