China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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low junction capacitance semiconductor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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low junction capacitance semiconductor

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... Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing ... 2025-07-11 00:37:58
... Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing ... 2025-07-11 00:37:58
...Ω FEATURES • Ultra low Qgd • Fast switching • 100% CP tested APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server ... 2025-07-11 00:37:58
Product Description: Low Leakage Voltage Power IGBT For Industrial Applications High voltage power IGBT, High voltage power cool mos, and high voltage ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
... Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V... 2025-07-11 00:37:58
...Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS=10V:340mΩ FEATURES • Adopt advanced ... 2025-07-11 00:37:58
...Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers superior performance in terms ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
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