China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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igbt power semiconductor

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Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures ... 2025-07-28 00:25:39
11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-28 00:25:39
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-28 00:25:39
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-28 00:25:39
Multiscene Insulated Gate Bipolar Transistor Inverter For Uninterruptible Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-28 00:25:39
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-28 00:25:39
...semiconductor devices, this MOSFET is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet strict ... 2025-07-28 00:25:39
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
... 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky Barrier Diodes come in a TO-220F package, which is a popular package type for ... 2025-02-08 13:30:15
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-28 00:25:39
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