China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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home power mosfet transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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home power mosfet transistor

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...MOSFET N-Type CS20N50A8 TO-220F For Power Supplies Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF... 2025-02-08 13:29:43
... Typ CS5N60A2 TO-220F N 5 600 ±30 2 4 1800 2300 17.6 618 Product Description: One of the key features of our High Voltage MOSFET is its Low ON ... 2025-02-08 13:29:43
... Typ CS4N65A2 TO-220F N 4 650 ±30 2 4 2220 2570 Product Description: One of the key features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:46
...MOSFET Power Distribution And Battery Charging Cycles​ Product Description: The Low Voltage MOSFET is available in three different package options: ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...MOSFET Low ON Resistance For Adapter CS12N65A2 TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:40
...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ... 2025-07-11 00:37:58
... with less power loss. This feature makes it highly efficient, making it suitable for applications where high efficiency is a must. It is perfect ... 2025-07-11 00:37:58
...MOSFET High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS... 2025-07-11 00:37:58
Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super ... 2025-07-11 00:37:58
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