China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high temperature resistant n channel igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high temperature resistant n channel igbt

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...High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and currents ... 2025-07-28 00:25:39
Product Description: N Type Low Leakage Low Capacitance High Temperature Resistance Semiconductor High Voltage Power Semiconductors are characterized ... 2025-07-28 00:25:39
Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal ... 2025-07-28 00:25:39
...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ... 2025-07-28 00:25:39
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-28 00:25:39
Product Description: Voltage Low Leakage Junction Capacitance High Temperature Resistance Semiconductor Bolstering Technology The High-temperature ... 2025-07-28 00:25:39
...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant. ... 2025-07-28 00:25:39
...Channel 15A 650V High Power IGBT TO-220F For Home Appliances MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.60V FEATURES • High ... 2025-07-28 00:25:39
Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and ... 2025-07-28 00:25:39
Product Description: N Channel Voltage Low Leakage Low Junction Capacitance High Temperature Resistance Power Semiconductor Our High Power Semiconduct... 2025-07-28 00:25:39
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